View 2sd882a datasheet:

SMD Type TransistorsNPN Transistors2SD882A1.70 0.1FeaturesExcellent hFE linearity and high hFEhFE = 60 to 400 (VCE = 2 V, IC = 1 A)0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 70 VCollector to Emitter Voltage VCEO 60 VEmitter to Base Voltage VEBO 6 VCollector Current to Continuous IC 3 ACollector Dissipation Pc 0.5 WJunction Temperature TJ 150Storage Temperature Tstg -55 to 150Electrical Characteristics Ta = 25Parameter Symbol Testconditions Min Typ Max UnitCollector-base breakdown voltage VCBO Ic=100uA ,IE=0 70 VCollector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 60 VEmitter-base breakdown voltage VEBO IE= 100 uA ,IC=0 6 VCollector cut-off current ICBO VCB=70 V , IE=0 1 uACollector cut-off current ICEO VCE=60 V , IB=0 10 uAEmitter cut

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