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2sd882l2sd882l

UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORFEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SB772L APPLICATIONS* Audio power amplifier* DC-DC convertor* Voltage regulatorTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO 40 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector dissipation( Tc=25C) Pc 10 WCollector dissipation( Ta=25C) Pc 1 WCollector current(DC) Ic 3 ACollector current(PULSE) Ic 7 ABase current IB 0.6 AJunction Temperature Tj 150 CStorage Temperature TSTG -55 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector cut-off current ICBO VCB=30V,IE=0 10

 

Keywords - ALL TRANSISTORS DATASHEET

 2sd882l.pdf Design, MOSFET, Power

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