View 2sk2613 datasheet:

2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 800 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 1000 VDrain-gate voltage (RGS = 20 k) VDGR 1000 VGate-source voltage VGSS 30 V 1. GATE DC (Note 1) ID 8 2. DRAIN (HEAT SINK) Drain current A Pulse (Note 1) IDP 24 3. SOURSE Drain power dissipation (Tc = 25C) PD 150 WJEDEC Single pulse avalanche energy EAS 910 mJJEITA (Note 2)TOSHIBA 2-16C1B Avalanche

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