View 2sk2614 datasheet:

2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOSV) 2SK2614 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.032 (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) 0.95 MAX. Low leakage current : IDSS = 100 A (max) (VDS = 50 V) 0.6 0.15 Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) 0.6 MAX.Absolute Maximum Ratings (Ta = 25C) 2.3 2.3 Characteristic Symbol Rating UnitDrain-source voltage VDSS 50 V 1 2 3 21. GATE Drain-gate voltage (RGS = 20 k) VDGR 50 V 12. DRAIN HEAT SINK Gate-source voltage VGSS 20 V3 3. SOURSE DC (Note 1) ID 20 ADrain current Pulse (Note 1) IDP 50 AJEDEC Drain power dissipation (Tc = 25C) PD 4

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