View 2sk2617als datasheet:

Ordering number : ENA0361A 2SK2617ALSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2617ALSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 30 VIDc*1 Limited only by maximum temperature 5 ADrain Current (DC)IDpack*2 SANYOs ideal heat dissipation condition 4.5 ADrain Current (Pulse) IDP PW10s, duty cycle1% 16 A2.0 WAllowable Power Dissipation PDTc=25C (SANYOs ideal heat dissipation condition) 25 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CAvalanche Energy (Single Pulse) *3 EAS 88 mJAvalanche Current *4 IAV 4 A*1 Shows chip capability*2 Package limited*3 VDD=5

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