View 2sk2619 datasheet:

2SK2619TENTATIVEFeatures and Applications Low ON-state resistance. Low Qg Absoulute Maximum Ratings / Ta=25CunitDrain to Source Voltage VDSS 500 V 30Gate to Source Voltage VGSS VDrain Current (D.C.) 6 AIDDrain Current (Pulse) AIDP 24Allowable power Dissipation PD (TC=25C) 70 WChannel Temperature 150Tch C Storage TemperatureTstg --55 to +150 C Electrical Characteristics / Ta=25Cmin typ max unit500Drain to Source Breakdown Voltage ID=1mA , VGS=0 VV(BR)DSSZero Gate Voltage Drain Current IDSS VDS=500V , VGS=0 1.0 mAGate to Source Leakage Current IGSS VGS= 30V , VDS=0 100 nACutoff Voltage VGS(Off) VDS=10V , ID=1mA 3.5 5.5 VForward Transfer Admittance | yfs | VDS=10V , ID=3A 1.5 3.0 SStatic Drain to Source on State Resistance RDS(On) ID=3A , VGS=15V 0.951.25 Input Capacitance Ciss VDS=20V , f=1MHz 700 pF

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