View 2sk3095ls datasheet:

Ordering number : EN86242SK3095LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3095LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 5 ADrain Current (Pulse) IDP PW10s, duty cycle1% 20 A2.0 WAllowable Power Dissipation PDTc=25C25 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CAvalanche Enargy (Single Pulse) *1 EAS 71.4 mJAvalanche Current *2 IAV 5 A*1 VDD=50V, L=5mH, IAV=5A*2 L5mH, single pulseElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxD

Keywords - ALL TRANSISTORS DATASHEET

 2sk3095ls.pdf Design, MOSFET, Power

 2sk3095ls.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3095ls.pdf Database, Innovation, IC, Electricity