View 2sk3096 datasheet:

isc N-Channel MOSFET Transistor 2SK3096FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 400 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 7 ADI Drain Current-Single Pluse 28 ADMP Total Dissipation @T =25 70 WD C.75Max. Operating Junction Temperature -55~150 TJStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 1.79th j-c1isc websitewww.iscsemi

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