View 2sk322 datasheet:

2SK322Silicon N-Channel Junction FETApplicationHF wide band amplifierOutlineMPAK311. Drain2. Source23. Gate2SK322Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 15 VGate to source voltage VGSO 15 VDrain current ID 50 mAGate current IG 5mAChannel power dissipation Pch 150 mWChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CElectrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsGate to drain breakdown V(BR)GDO 15 V IG = 100 AvoltageGate to source breakdown V(BR)GSO 15 V IG = 100 AvoltageGate cutoff current IGSS 10 nA VGS = 7 V, VDS = 0Drain current IDSS*1 5 50 mA VDS = 5 V, VGS = 0 (pulse)Gate to source cutoff voltage VGS(off) 3.0 V VDS = 5 V, ID = 100 AForward t

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