View 2sk3233 datasheet:

2SK3233Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1369 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 1.1 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratingsOutlineTO220CFMDG1231. Gate2. Drain3. SourceS2SK3233Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 5ADrain peak current ID (pulse) Note1 20 ABody-drain diode reverse drain IDR 5AcurrentBody-drain diode reverse drain peak IDR (pulse) Note1 20 AcurrentAvalanche current IAP Note3 5AChannel dissipation Pch Note2 30 WChannel to case Tehrmal

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