View 2sk3236 datasheet:

2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications 4 V gate drive Low drain-source ON resistance: R = 13.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 42 S (typ.) fs Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement-model: V = 1.3~2.5 V (V = 10 V, I = 1 mA) th DS DMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDSS 60 VDrain-gate voltage (RGS 20 k ) VDGR 60 VGate-source voltage VGSS 20 VDC (Note 1) ID 35Drain current A Pulse (Note 1) IDP 105JEDEC Drain power dissipation (Tc 25C) PD 30 WJEITA SC-67Single pulse avalanche energy EAS 68 mJ(Note 2)TOSHIBA 2-10R1BAvalanche current IAR 35 AWeight: 1.9 g (

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