View 2sk3560 datasheet:

Power MOSFETs2SK3560Silicon N-channel power MOSFETUnit: mm4.60.210.50.31.40.1For PDP/For high-speed switching Features Low on-resistance, low Qg1.40.1 High avalanche resistance2.50.20.80.12.540.30 to 0.3 Absolute Maximum Ratings TC = 25C(10.2)Parameter Symbol Rating Unit(8.9)Drain-source surrender voltage VDSS 230 V1 2 3Gate-source surrender voltage VGSS 30 VID 30 ADrain current1: GatePeak drain current IDP 120 A2: DrainPD 50 W 3: SourcePowerTO-220C-G1 PackagedissipationTa = 25C3Channel temperature Tch 150 CInternal ConnectionStorage temperature Tstg -55 to +150 CDGS Electrical Characteristics TC = 25C 3CParameter Symbol Conditions Min Typ Max UnitGate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 230 VDiode forward voltage VDSF IDR = 30 A, VGS = 0 -1.5 V

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