View 2sk3562 datasheet:

isc N-Channel MOSFET Transistor 2SK3562FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 6 ADI Drain Current-Single Pluse 24 ADMP Total Dissipation @T =25 40 WD CMax. Operating Junction Temperature -55~150 TJStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 3.13th j-c1isc websiteww

Keywords - ALL TRANSISTORS DATASHEET

 2sk3562.pdf Design, MOSFET, Power

 2sk3562.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3562.pdf Database, Innovation, IC, Electricity