View 2sk3564 datasheet:

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 900 VDrain-gate voltage (RGS = 20 k) VDGR 900 VGate-source voltage VGSS 30 VDC (Note 1) ID 3 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 9 3: Source (Note 1)Drain power dissipation (Tc = 25C) PD 40 WSingle pulse avalanche energy EAS 408 mJJEDEC (Note 2)JEITA SC-67Avalanche current IAR 3 ARepetitive avalanche energy (Note 3) EAR 4.0 mJTOSHIBA 2-10U1BC

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