View 2sk3566 datasheet:

isc N-Channel MOSFET Transistor 2SK3566I2SK3566FEATURESLow drain-source on-resistance:RDS(on) 6.4.Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 900 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 2.5 ADI Drain Current-Single Pulsed 7.5 ADMP Total Dissipation @T =25 40 WD CT Max. Operating Junction Temperature 150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 3.125Channel-to-ambient thermal resistance/WRth(ch-a) 62.51isc websitewww.iscsemi.cn

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