View 2sk3567 datasheet:

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 600 VDrain-gate voltage (RGS = 20 k) VDGR 600 VGate-source voltage VGSS 30 VDC (Note 1) ID 3.5 1: Gate Drain current A 2: Drain Pulse (t = 1 ms) IDP 14 3: Source (Note 1)Drain power dissipation (Tc = 25C) PD 35 WSingle pulse avalanche energy EAS 201 mJJEDEC (Note 2)JEITA SC-67Avalanche current IAR 3.5 ARepetitive avalanche energy (Note 3) EAR 3.5 mJTOSHIBA 2-10U1

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