View 2sk3875-01 datasheet:

2SK3875-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratings Unit RemarksDrain-source voltage VDS 900 VEquivalent circuit schematicVDSX 900 VVGS=-30VContinuous Drain Current ID 13 ADrain(D)Pulsed Drain Current ID(puls] 52 AGate-Source Voltage VGS 30 VNon-RepetitiveNote *1Maximum Avalanche current IAS 13 AGate(G)RepetitiveSource(S)Maximum Avalanche current IAR 6.5 ANon-Repetitive EAS 1006 mJNote *2

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