View 2sk3875-01 datasheet:

isc N-Channel MOSFET Transistor 2SK3875-01FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 900 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 13 ADI Drain Current-Single Pluse 52 ADMP Total Dissipation @T =25 355 WD CMax. Operating Junction Temperature -55~150 TJStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.352th j-c1isc websitewww.iscse

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