View 2sk3876-01r datasheet:

2SK3876-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratings Unit RemarksDrain-source voltage VDS 900 VVDSX 900 VVGS=-30VEquivalent circuit schematicContinuous Drain Current ID 13 APulsed Drain Current ID(puls] 52 ADrain(D)Gate-Source Voltage VGS 30 VNon-RepetitiveNote *1Maximum Avalanche current IAS 13 ARepetitiveGate(G)Maximum Avalanche current IAR 6.5 ASource(S)Non-Repetitive EAS 1006 mJNote *2Maximum Avalanche Energy

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