View 2sk3878 datasheet:

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 900 VDrain-gate voltage (RGS = 20 k) VDGR 900 VGate-source voltage VGSS 30 V 1. GATE DC (Note 1) ID 9 2. DRAIN (HEATSINK) Drain current A 3. SOURCE Pulse (Note 1) IDP 27 Drain power dissipation (Tc = 25C) PD 150 WJEDEC Single pulse avalanche energy EAS 778 mJ(Note 2)JEITA SC-65 Avalanche current IAR 9 ATOSHIBA 2-16C1B Repetitive avalanche energy (Note

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