View 2sk3879 datasheet:

isc N-Channel MOSFET Transistor 2SK3879FEATURESDrain Current : I = 6.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 6.5 ADI Drain Current-Single Pluse 19.5 ADMP Total Dissipation @T =25 80 WD CMax. Operating Junction Temperature -55~150 TJStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 1.56th j-c1isc websitewww.iscsem

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