View 2sk3879 datasheet:

2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 800 VDrain-gate voltage (RGS = 20 k) VDGR 800 VGate-source voltage VGSS 30 VDC (Note 1) ID 6.5 Drain current A Pulse (Note 1) IDP 19.5 Drain power dissipation (Tc = 25C) PD 80 WSingle pulse avalanche energy EAR 375 mJJEDEC (Note 2)JEITA Avalanche current IAR 6.5 ARepetitive avalanche energy (Note 3) EAR 8 mJTOSHIBA 2-10S2BChannel temperature Tch 150 CWeig

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