View 3da77 datasheet:

isc Silicon NPN Power Transistor 3DA77DESCRIPTIONHigh DC Current Gain: h = 10(MAX)@I = 1.5AFE CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 70 VCEOV Emitter-Base Voltage 1 VEBOI Collector Current-Continuous 5.0 ACP Collector Power Dissipation@T =75 40 WC CT Junction Temperature 175 JStorage Temperature Range -55-175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.25 /Wth j-cisc websitewww.iscsemi.com isc & iscsemi is registered trademark1isc Silicon NPN Power Transistor 3DA77ELECTRICAL CHARACTERISTICST =25 unless o

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