View 3dg4003 datasheet:

2SC4003(3DG4003) NPN /SILICON NPN TRANSISTOR Purpose: High voltage driver applications. MBIT FeaturesHigh breakdown voltage, adoption of MBIT process excellent h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V CBO V 400 V CEO V 5.0 V EBO I 200 mA C I 400 mA CP P 1.0 W C P TC=25) 10 W C(T 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max VCBO IC=10A IE=O 400 V VCEO IC=1.0mA RBE= 400 V VEBO IE=10A IC=0 5.0 V I V =300V I =0 0.1 A CBO CB EI V =4.0V I =0 0.1

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