View 8205a datasheet:

RUMW UMW 8205AUMW 8205ADual N-Channel Enhancement Mode MOSFET APPLIACTION FEATURES Portable Equipment20V 5A N-channel Trench MosfetBattery Powered SystemRDSON27m @Vgs=4.5V, Id=5ARDSON36m @Vgs=2.5V, Id=3ALow gate ChargeFast switching capabilityHigh reliability and ruggedSYMBOL ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 12 V Continuous ID 5 A Drain Current(Note1)Pulsed IDM 20 A TA=25C 0.83 Power Dissipation (TA=25C) (Note 2) PD TA=100C 0.3 W Thermal Resistance-Junction to Ambient RJA 150 C/W Maximum Junction Temperature TJ 150 C Storage Temperature Range TSTG -55 to 150 C Note: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Pulse width limited by TJ(MAX)ELECTRICAL CHARACTERISTICSTJ=25,unless otherwise Note

Keywords - ALL TRANSISTORS DATASHEET

 8205a.pdf Design, MOSFET, Power

 8205a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 8205a.pdf Database, Innovation, IC, Electricity