View a1015 datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO -50 VCollector-Base Voltage 1 2 3 VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current -Continuous -150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage Temperature -55-150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100A, IE=0 -50 VCollector-emitter breakdown voltage V(BR)CEO Ic= -0. 1

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