All Transistors. Datasheet

 

View aok20n60l datasheet:

aok20n60laok20n60l

isc N-Channel MOSFET Transistor AOK20N60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 20 ADI Drain Current-Single Pluse 80 ADMP Total Dissipation @T =25 417 WD CT Max. Operating Junction Temperature -55~150 JStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.3th j-c1isc webs

 

Keywords - ALL TRANSISTORS DATASHEET

 aok20n60l.pdf Design, MOSFET, Power

 aok20n60l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 aok20n60l.pdf Database, Innovation, IC, Electricity

 

 
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