View auirf1010ezstrl datasheet:

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)75ADescriptionDDDSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance per siliconarea. Additional features of this design are a 175C junction S SD DSoperating temperature, fast switching speed and improvedG GGDrepetitive avalanche rating . These features combine to makeD2PakTO-220AB TO-262this design an extremely efficient and reliable device for useAUIR

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 auirf1010ezstrl.pdf Design, MOSFET, Power

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