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AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processing S S D techniques to achieve extremely low on-resistance per silicon G G area. Additional features of this design are a 175C junction D2Pak TO-262 operating temperature, fast switching speed and improved AUIRF1405ZS AUIRF1405ZL repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in G D SAutomotive application

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 auirf1405zs auirf1405zl.pdf Database, Innovation, IC, Electricity