View auirf2804 auirf2804s auirf2804l datasheet:
AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, thisS S S D HEXFET Power MOSFET utilizes the latest processing G D G G techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction TO-220AB D2Pak TO-262 AUIRF2804 operating temperature, fast switching speed and improved AUIRF2804L AUIRF2804S repetitive avalanche rating. These features combine to make this
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auirf2804 auirf2804s auirf2804l.pdf Design, MOSFET, Power
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