View auirf2804strr datasheet:

AUTOMOTIVE GRADE PD -96290AAUIRF2804AUIRF2804SAUIRF2804LFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceV(BR)DSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.5m l Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 2.0m Gl Lead-Free, RoHS CompliantID (Silicon Limited) 270A l Automotive Qualified *SID (Package Limited) 195A DescriptionSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestDDDprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features of thisdesign are a 175C junction operating temperature,SS DSfast switching speed and improved repetitive ava-DGDGlanche rating . These features combine to make this Gdesign an extremely efficient and reliable device forTO-220

Keywords - ALL TRANSISTORS DATASHEET

 auirf2804strr.pdf Design, MOSFET, Power

 auirf2804strr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 auirf2804strr.pdf Database, Innovation, IC, Electricity