View auirf2804wl datasheet:

PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *DescriptionSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features of thisdesign are a 175C junction operating temperature,Sfast switching speed and improved repetitive ava-Dlanche rating . These features combine to make this Gdesign an extremely efficient and reliable device forTO-262 WideLeaduse in Automotive applications and a wide variety of

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