View auirf3205zstrl datasheet:

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)75ADescriptionSpecifically designed for Automotive applications,DDthis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofSSDthis design are a 175C junction operating tempera-DGGture, fast switching speed and improved repetitiveavalanche rating . These features combine to makeD2PakTO-220ABthis design an extremely efficient and reliable deviceAUIRF3205ZSAU

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