View auirf5210s datasheet:

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifically designed for Automotive applications, this cellular D2Pak AUIRF5210S design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and G D Sruggedized device design that HEXFET power MOSFETs are Gate Drain Sourcewell known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications..

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