View auirf6215s datasheet:

AUTOMOTIVE GRADEAUIRF6215SFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DVDSS -150Vl P-Channell Dynamic dV/dT RatingG RDS(on) max. 0.29l 175C Operating TemperatureSID -13Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified *DescriptionSSpecifically designed for Automotive applications, DGthis cellular design of HEXFET Power MOSFETsutilizes the latest processing techniques to achieveD2Paklow on-resistance per silicon area. This benefitAUIRF6215Scombined with the fast switching speed and rugge-dized device design that HEXFET power MOSFETsGDSare well known for, provides the designer with anGate Drain Sourceextremely efficient and reliable device for use inAutomotive and a wide variety of other applications

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 auirf6215s.pdf Design, MOSFET, Power

 auirf6215s.pdf RoHS Compliant, Service, Triacs, Semiconductor

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