View auirf6218l auirf6218s datasheet:

AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *DDescriptionSpecifically designed for Automotive applications,SDSthis cellular design of HEXFET Power MOSFETsGGDutilizes the latest processing techniques to achieveD2PakTO-262low on-resistance per silicon area. This benefitAUIRF6218SAUIRF6218Lcombined with the fast switching speed and rugge-dized device design that HEXFET power MOSFETsare well known for, provides the designer with anG D Sextremely efficient and reliable device for use inGate Drain Source

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