View auirfz44n datasheet:

AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S D Specifically designed for Automotive applications, this Stripe G Planar design of HEXFET Power MOSFETs utilizes the latest TO-220AB processing techniques to achieve low on-resistance per silicon AUIRFZ44N area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient G D Sand reliable device for use in Automotive and a wide variety of Gat

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