View auirfz44vzs datasheet:

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to achieve D2Pak extremely low on-resistance per silicon area. Additional features of AUIRFZ44VZS this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These G D Sfeatures combine to make this design an extremely efficient and Gate Drain Sourcereliable device for use in Automotive applications and a wide varie

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 auirfz44vzs.pdf Design, MOSFET, Power

 auirfz44vzs.pdf RoHS Compliant, Service, Triacs, Semiconductor

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