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AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET Power S D G MOSFET utilizes the latest processing techniques to achieve extremely low G on-resistance per silicon area. Additional features of this design are a 175C TO-220AB D2Pak junction operating temperature, fast switching speed and improved repetitive AUIRFZ44Z AUIRFZ44ZS avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wid
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auirfz44z auirfz44zs.pdf Design, MOSFET, Power
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