View auirlr2905ztr datasheet:

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automotive Qualified *DescriptionDSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features of this GD-Pakdesign are a 175C junction operating temperature,AUIRLR2905Zfast switching speed and improved repetitive ava-lanche rating . These features combine to make thisdesign an extremely efficient and reliable device forGDSuse in Automoti

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