View bc337 datasheet:

isc Silicon NPN Transistor BC337DESCRIPTIONLow VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF-Driver stages and low power output stages.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Collector-Emitter Voltage 45 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 800 mACCollector Power DissipationP 625 mWC@T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Transistor BC337ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITV Collector-Base Breakdown Voltage I =100A; I = 0 50 V(BR)CBO C EV Collector-Emitter Breakdown Vol

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