View bc337 datasheet:

SEMICONDUCTOR BC337TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).N DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_H J 14.00 + 0.50CHARACTERISTIC SYMBOL RATING UNITK 0.55 MAXF FL 2.30VCBOCollector-Base Voltage 50 VM 0.45 MAXN 1.00VCEO 1 2 3Collector-Emitter Voltage 45 VVEBO 1. COLLECTOREmitter-Base Voltage 5 V2. BASEICCollector Current 800 mA3. EMITTERIEEmitter Current -800 mAPCCollector Power Dissipation 625 mWTO-92TjJunction Temperature 150Tstg -55 150Storage Temperature RangeELECTRICAL CHARACTERISTICS (Ta=25 )CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX

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