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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC489/DHigh Current TransistorsNPN SiliconBC489,A,BCOLLECTOR12BASE3EMITTERMAXIMUM RATINGS12Rating Symbol Value Unit3CollectorEmitter Voltage VCEO 80 VdcCASE 2904, STYLE 17CollectorBase Voltage VCBO 80 VdcTO92 (TO226AA)EmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 0.5 AdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WattDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case RqJC 83.3 C/WELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)Characteri

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