View bc548 datasheet:

isc Silicon NPN Transistor BC548DESCRIPTIONHigh VoltageComplement to Type BC558Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV and home appliance equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBOV Collector-Emitter Voltage 30 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 100 mACCollector Power DissipationP 500 mWC@T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Transistor BC548ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITV Collector-Base Breakdown Voltage I =100A; I = 0 30 V(BR)CBO C EV Collector-Emitt

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