All Transistors. Datasheet

 

View bc556 bc557 bc558 datasheet:

bc556_bc557_bc558bc556_bc557_bc558

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORSBC557, A, B, CBC558, A, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC556 BC557 BC558 UNITSCollector Emitter Voltage VCEO 65 45 30 VCollector Emitter Voltage VCES 80 50 30 VCollector Base Voltage VCBO 80 50 30 VEmitter Base Voltage VEBO 5 VCollector Current Continuous IC 100 mACollector Current Peak ICM 200 mABase Current Peak IBM 200 mAEmitter Current Peak IEM 200 mAPower Dissipation at Ta=25C PD 500 mWDerate Above 25C4.0 mW/CStorage Temperature Tstg - 65 to +150 CJunction Temperature Tj 150 CTHERMAL RESISTANCEJunction to Ambient in free air Rth (j-a) 250 C

 

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