View bc636 bc638 bc640 datasheet:

BC636/638/640Switching and Amplifier Applications Complement to BC635/637/639TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC636 -45 V: BC638 -60 V: BC640 -100 VVCES Collector-Emitter Voltage : BC636 -45 V: BC638 -60 V: BC640 -100 VVCEO Collector-Emitter Voltage : BC636 -45 V: BC638 -60 V: BC640 -80 VVEBO Emitter-Base Voltage -5 VIC Collector Current -1 AICP Peak Collector Current -1.5 AIB Base Current -100 mAPC Collector Power Dissipation 1 WTJ Junction Temperature 150 CTSTG Storage Temperature -65 ~ 150 CElectrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCEO Collector-Emitter Breakdown Voltage IC= -10mA,

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