View bd135 bd137 bd139 datasheet:

BD135/137/139Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135 45 V : BD137 60 V : BD139 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 1.5 AICP Collector Current (Pulse) 3.0 AIB Base Current 0.5 APC Collector Dissipation (TC=25C) 12.5 W PC Collector Dissipation (Ta=25C) 1.25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage: BD135 IC =

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