View bd140 datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD140DESCRIPTIONDC Current Gain-: h = 63(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -80V(Min)CEO(SUS)Complement to type BD139Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -80 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -1.5 ACI Base Current-Continuous -0.5 ABCollector Power Dissipation1.25@ T =25aP WCCollector Power Dissipation12.5@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 TstgTHERMAL CH

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