View bd176 bd178 bd180 datasheet:

BD176/178/180Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD176 - 45 V : BD178 - 60 V : BD180 - 80 V VCEO Collector-Emitter Voltage : BD176 - 45 V : BD178 - 60 V : BD180 - 80 VVEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A IC *Collector Current (Pulse) - 7 A PC Collector Dissipation (TC=25C) 30 WRja Junction to Ambient 70 C/WRjc Junction to Case 8.5 C/W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage

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