All Transistors. Datasheet

 

View bd241 bd241a bd241b bd241c datasheet:

bd241_bd241a_bd241b_bd241cbd241_bd241a_bd241b_bd241c

isc Silicon NPN Power Transistor BD241/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD241; 60V(Min)- BD241ACEO(SUS)80V(Min)- BD241B; 100V(Min)- BD241CComplement to Type BD242/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD241 55BD241A 70V Collector-Base Voltage VCBOBD241B 90BD241C 115BD241 45BD241A 60Collector-EmitterV VCEOVoltageBD241B 80BD241C 100V Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 3.0 ACI Collector Current-Peak 5.0 ACMI Base Current 1.0 ABCollector Power DissipationP 40 WC@ T =25CT Junction Temperature 150

 

Keywords - ALL TRANSISTORS DATASHEET

 bd241 bd241a bd241b bd241c.pdf Design, MOSFET, Power

 bd241 bd241a bd241b bd241c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bd241 bd241a bd241b bd241c.pdf Database, Innovation, IC, Electricity

 

 
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